RTUEE / EC / EEEYr 2021 · Sem 72021

Q8VLSI Design

Question

16 marks

Q.4. Draw a circuit diagram of a DRAM cell and explain the following operations - (i) Synchronous read mode (ii) Asynchronous read mode (iii) Leakage currents and refresh operation. [8]

(b) Draw SRAM cell and explain its write and read operation with appropriate timing diagram. [8]

Answer

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